Biography
Edward Shelton studied engineering at the University of Cambridge and graduated with a Masters Degree in 1997. He started his career in engineering consulting developing high tech industrial products. In 2010 he was a founding member of a Cambridge start-up developing cutting-edge technology for the power electronics industry. He is the inventor of a number of filed Patents. In 2015 Edward took a senior research position at the University of Cambridge, where he was involved in academic research and development contracts for global OEM’s. He has authored a number of conference papers and tutorials on wide band gap semiconductor devices and application circuits. He is now leading the Energy and Power Electronics sector at Cambridge Design Partnership Ltd, developing new business and championing new technology. He also holds a research position at the University of Oxford, UK.
Research Interests
1. Design Automation:
• Mathematical modelling of complete power converter systems.
• Circuit optimisation (cost vs. performance).
• Comparison between different optimised topologies.
2. Wide-band-gap:
• Ultra-fast switching application circuits.
• Low inductance power circuit design.
• Active gate-drives and feedback control of power devices.
• High band-width, high-fidelity measurement systems.
• Novel power device architectures.
• Packaging and converter system design.
3. Ultra-high efficiency power conversion:
• Generation of new circuit designs, including novel multi-level architectures.
• High-frequency transformer coupled converter circuits.
Research Groups
Related Academics
Publications
High Current, High Bandwidth Current Measurement (ECCE 2020)
Comparison between various types of current measurement techniques. A high bandwidth linear Rogowski coil is presented with test results.
Active Voltage Controlled Switching of the Power GaN HEMT (ISIE 2020)
Demonstration of active voltage feedback control of a GaN transistor.
Active Switching with SiC MOSFETs (ECCE 2019)
Active voltage and current feedback control strategy with a current-mode gate drive for a 900V Cree SiC MOSFET switching circuit.
Control Strategies For Parallel Connected IGBT Modules (ECCE 2019)
Control strategy for parallel connection of high-power IGBT modules, with current measurement using a novel Rogowski coil design.
Coordinated Switching with SiC MOSFET for Increasing Turn-off dV/dt of Si IGBT (ECCE 2018)
A solution to the excess carrier issue that limits the turn-off dV/dt of an IGBT is presented, using the coordinated switching of a Si IGBT and a SiC MOSFET in parallel.
Experimental Comparison of GaN, SiC and Si Switching Power Devices (IECON 2017)
Experimental switching behaviour comparison of GaN HEMT and SiC MOSFET against their Si competitors, the Si SJ MOSFET and high speed Si IGBT.
Low Inductance Switching for SiC MOSFET Based Power Circuit (ECCE 2017)
Prototype low inductance PCB design for a WBG switching circuit. A linear current gate-drive circuit and a high bandwidth measurement system have been integrated into the PCB and this is compared with conventional probes. Tests demonstrate that dV/dt becomes invariant to load current changes using a current-mode gate-drive.
Design & Measurement Considerations for WBG Switching Circuits (EPE 2017)
WBG half-bridge switched inductive load circuit and test results.
Interleaved, Folding, Interpolating dual-path Adiabatic Autotransformer based power converter (PCIM 2016)
A novel approach to building a high efficiency and dimensionally compact power 2kW power inverter. A prototype was built for the Google Littlebox competition, which demonstrated a high fidelity sinewave output and very high efficiency.
Awards, Prizes and Impact
SEMINARS AND TUTORIAL PRESENTATIONS
WBG devices, simulation, measurement and test circuits (PCIM Tutorial 2019)
How to achieve practical, efficient and reliable operation of WBG devices in high-frequency medium- to high-power switching circuits.
Wide Band Gap Power Devices Characterisation, Simulation and Testing (PCIM Tutorial Session, 2018)
How to achieve practical, efficient and reliable operation of WBG devices in high-frequency medium- to high-power switching circuits.
Wide Band Gap Power Devices Characterisation, Simulation and Testing (APEC Tutorial Session, 2018)
How to achieve practical, efficient and reliable operation of WBG devices in high-frequency medium- to high-power switching circuits.
Wide band gap circuit optimisation and performance comparison (IEEE PELS Webinar, 2017)
High Speed GaN Switching Circuits (IWBGPEAW conference presentation, 2017)
AWARDS
Cambridge University Research Impact Awards, Runner-up (2018)
Selected for 2018 awards ceremony in recognition of taking our research work to industry and the wider academic community.
